Antiferromagnetic Coupling in Magnetic Semiconductor
November 25th, 2008 / 1 Comment

NIST, Korea University and University of Notre Dame researchers have observed this property for the first time, detailed in the paper Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be.
Look for this to be published in Physical Review Letters.
Check out wikipedia’s entry on ferromagnetism for more information [...]


