Antiferromagnetic Coupling in Magnetic Semiconductor
Credit: Brian Kirby, NIST
NIST, Korea University and University of Notre Dame researchers have observed this property for the first time, detailed in the paper Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be.
Look for this to be published in Physical Review Letters.
Check out wikipedia’s entry on ferromagnetism for more information on this property.
Click the picture to go to the news story at physorg.
This entry was posted on Tuesday, November 25th, 2008 at 5:27 pm and is filed under Atomic, Molecular, and Optical. You can follow any responses to this entry through the RSS 2.0 feed. You can leave a response, or trackback from your own site.
